Center Innovation Fund: JPL CIF
Extreme Imaging
Project Description
Sandia will provide, at no cost to JPL, detector wafers that have been bonded to custom CMOS ROICs. JPL will use MBE and ALD to create nanoengineered surfaces that improve sensitivity and stabilize/isolate the detectors against radiation-induced surface damage. This program will produce superlattice-doped photodiodes and imaging arrays for integration and test in Sandia's Z-pinch facility.
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Anticipated Benefits
JPL and Sandia will collaborate on the development and demonstration of imaging detectors with 1 ns frame rates. Using a pulse-dilation camera, we expect to achieve timing resolution better than 10 ps.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
| Jet Propulsion Laboratory (JPL) | Lead Organization | FFRDC/UARC | Pasadena, California |
| Sandia National Laboratories (SNL) | Supporting Organization | FFRDC/UARC | Albuquerque, New Mexico |
Primary U.S. Work Locations
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California
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