Center Innovation Fund: JPL CIF
Extreme Imaging
Project Introduction
Sandia will provide, at no cost to JPL, detector wafers that have been bonded to custom CMOS ROICs. JPL will use MBE and ALD to create nanoengineered surfaces that improve sensitivity and stabilize/isolate the detectors against radiation-induced surface damage. This program will produce superlattice-doped photodiodes and imaging arrays for integration and test in Sandia's Z-pinch facility.
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Anticipated Benefits
JPL and Sandia will collaborate on the development and demonstration of imaging detectors with 1 ns frame rates. Using a pulse-dilation camera, we expect to achieve timing resolution better than 10 ps.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
Jet Propulsion Laboratory
(JPL)
|
Lead Organization | NASA Center | Pasadena, CA |
| Sandia National Laboratories | Supporting Organization | Academic | Albuquerque, NM |
Primary U.S. Work Locations
-
California
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Center / Facility:
- Jet Propulsion Laboratory (JPL)
Responsible Program:
- Center Innovation Fund: JPL CIF
Project Management
Program Director:
Principal Investigator:
- Michael Hoenk
Project Duration
Start: Oct 2016
End: Jul 2017
Technology Maturity (TRL)
| Start: | 2 |
| Current: | 3 |
| Estimated End: | 3 |
Applied Research
Development
Demo & Test
Technology Areas
Primary:
- TA 8 Science Instruments, Observatories, and Sensor Systems
- TA 8.3 In-Situ Instruments and Sensors
- TA 8.3.3 In-Situ (other)
Target Destination
Earth
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