SBIR/STTR
InGaN High Temperature Photovoltaic Cells, Phase II
Project Introduction
The objectives of this Phase II project are to develop InGaN photovoltaic cells for high temperature and/or high radiation environments to TRL 4 and to define the development path for the technology to TRL 5 and beyond. The project will include theoretical and experimental refinement of device structures produced in the Phase I, as well as modeling and optimization of solar cell device processing. The devices will be tested under concentrated AM0 sunlight, at temperatures from 100ºC to 250ºC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high temperature / high radiation capable solar cells in NASA space missions.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
Glenn Research Center
(GRC)
|
Lead Organization | NASA Center | Cleveland, OH |
| Integrated Micro Sensors, Inc. | Supporting Organization | Industry | Houston, TX |
Primary U.S. Work Locations
-
Ohio
-
Texas
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Center / Facility:
- Glenn Research Center (GRC)
Responsible Program:
- SBIR/STTR
Project Management
Program Director:
Program Manager:
Project Duration
Start: Jan 2010
End: Apr 2012
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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.