By developing a reliable GaN based SSPA with linear 50W RF output power and >60% efficiency at frequencies between 8 to 9 GHz, the SWAP of future long-range communication equipment will be significantly decreased. Also the data rates of longrange X-Band communication links will be increased by >30% relative to the technology utilized today. Thus, a robust GaN based MMIC design is the primary focus for this project and can commercially be leveraged by NASA for other long-range space RF communication systems. Additionally, at the completion of Phase II of this proposed project it is anticipated to have experimental data on the radiation hardness of Nitronex GaN RF devices. This data and the validation of GaN 50 W MMIC to be radiation hardened will be of commercial value. The development and manufacture of Gallium Nitride (GaN) FETs for commercial and military RF applications is the core business for Nitronex Corporation. Specifically, the development of our GaN technology for use in high RF power, broad bandwidth under relatively stringent operating requirements, e.g., military applications, as well as, WiMAX, W-CDMA and LTE, is of primary importance. Nitronex will push the development of GaN based MMIC and hybrid PAs, LNAs, T/R switches, mixers, gain blocks and other circuits that exploit the high performance and low cost platform developed at Nitronex. Therefore, the work proposed in this Phase I, II and a potential Phase III follow-on effort is well aligned with our future technology and product development commercialization roadmaps.