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Center Independent Research & Development: GSFC IRAD

Low Loss Amorphous Silicon for MKID Detectors

Completed Technology Project

Project Introduction

We will develop alow loss amorphous Silicon (a-Si) as the dielectric for superconducting detector applications like MicroSpec to reduce the fabrication complexity and to extend the in house capability to 200mm wafer processing. The current process employs a thin (~0.5um or less) crystalline silicon layer applied by a complex and time consuming process which is limited to 150mm wafers due to the required bonding step. We will develop and optimize a process for depositing a-Si which will be the second of three simple sequential deposition steps which will improve process yield.

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Anticipated Benefits

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Project Duration

Technology Maturity (TRL)

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