We will develop alow loss amorphous Silicon (a-Si) as the dielectric for superconducting detector applications like MicroSpec to reduce the fabrication complexity and to extend the in house capability to 200mm wafer processing. The current process employs a thin (~0.5um or less) crystalline silicon layer applied by a complex and time consuming process which is limited to 150mm wafers due to the required bonding step. We will develop and optimize a process for depositing a-Si which will be the second of three simple sequential deposition steps which will improve process yield.More »
The target application is the dielectric layer of Microwave Kinectic Inductance Detectors, (MKID). If a sufficiently low loss can be achieved with the a-Si films, we expect that this simplified process would improve the yield by 1.5 to 2X and would also reduce cost. This technology could also extend to other detector and photovoltaic devices.
This process could be incorporated into existing and future projects like EXCLAIM, CMBPol, and Probe of Inflation and Cosmic Origins (PICO) among others.More »
|Organizations Performing Work||Role||Type||Location|
|Goddard Space Flight Center (GSFC)||Lead Organization||NASA Center||Greenbelt, Maryland|
Samples of amorphous silicon were deposited on silicon substrates both with and without additional hydrogen using the Taguchi method for optimization. These samples were then characterized by Raman spectroscopy to determine the relative number of hydrogen terminated bonds in the amorphous silicon. Future work would include microwave loss measurements of resonator structures.
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