This Phase II SBIR proposes to develop high quantum efficiency (QE) and low dark current infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI. The initial goal includes achieving QE of at least 50% with MWIR spectral wavelength band in the 2.5 to 12 um, and possibly beyond. The SLS detector design will be done in collaboration with Dr. Sarath Gunapla's infrared device group at JPL to ensure that the effort addresses NASA needs. Advanced structure design incorporating barriers will be used to reduce dark current. If successful, a Focal Plane Array may be fabricated during Phase II.