Within the context of this project, White Light Power Inc. (WLPI) will demonstrate prototype vertical GaN Schottky diodes for high-power rectification at W-band. To achieve this goal, WLPI will utilize it's experience of fabricating power rectifier diodes to enable highly cost-efficient selection of a wafer. The same experience will also be utilized in selecting and working with an epi-supplier to ensure demonstration of the requisite 1000 cm2/Vs mobility. WLPI will design, manufacture and test the diodes to ensure that the device characteristics such as breakdown voltage, C-V characteristics, leakage and ideality factor are consistent with the target 200 mW power handling capacity. WLPI will provide data and documentation supporting and detailing the wafer selection, epi qualification, manufacturing and testing of the devices. WLPI will dice and deliver devices to NASA for further testing.