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SBIR/STTR

Hot-Electron Nanobolometers Based on Disordered GaN Heterostructures, Phase I

Completed Technology Project

Project Introduction

Hot-Electron Nanobolometers Based on Disordered GaN Heterostructures, Phase I
The proposed research is to develop hot electron THz nanobolometers (nanoHEB) with unprecedented low electron heat capacity (~10-19 J/K) for use in advanced heterodyne receivers, operating from liquid nitrogen to room temperatures. The sensor is based on the effect of electron heating in highly disordered two-dimensional electron gas (2DEG) in GaN heterostructures. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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