A proven and characterized DI cell library in high-power wide-temperature SOI technology completes a bridge for a reliable digital design technique between silicon, SiGe mixed-signal circuits and high-power applications. Further, as state-of-the-art RS-485 chips have limited voltage and temperature ranges for space applications (min. -55o C), producing a wide-temperature (cryogenic rated) radiation-hardened RS-485 interface has immediate usefulness to NASA and clearly advances the state of the art with the opportunities for integration it provides. Wide-temperature radiation hardened RS-485 interfaces that can be integrated with digital, analog and power IP blocks would provide boundless applications and point the way forward for distributed space electronics. DI logic in wide-temperature, high-power SOI technology offers a potential solution to digital circuitry for harsh radiation environments such as aerospace. The aerospace electronics market alone is predicted to be a $138 billion market in 2011. The success and qualification of rad-hard DI logic will allow for the creation of commercial integrated solutions in this market. Additional potential markets in the commercial sector are numerous. The designed DI-NCL asynchronous digital standard cell library can be applied to the creation of custom and general-purpose processing technology for integrated power electronics, such as DC-DC converters commonly needed in solar, wind and other alternative energy architectures. The design techniques and circuit topologies proven in the course of the research can be applied to alternative IC processes enabling new capability including wide-temperature sensing and control electronics.