This Phase II SBIR proposes to further develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving QE of at least 40% with LWIR spectral wavelength band near 12 um. The SLS detector design will be developed in consultation with the infrared detector group at JPL to ensure that this effort addresses NASA needs. In the superlattice engineered structure, many detector properties are determined once epitaxial growth is completed. The technical approach will be to develop improved epitaxial stack design with a goal to dramatically improve detector properties. This is based on existing high performance GaSb-based type-II SLS detector growth technology, with novel design, development of MBE growth to implement the design, and fabrication and characterization of devices from the epi grown material. The objective is to dramatically improve quantum efficiency in the detector structure. The Phaqse II effort will focus on FPA demonstration.