Group III-nitride optoelectronics have become prevalent in commercial applications for shortwavelength blue and UV LEDs. Laser diodes made from this material system are still limited in lifetime by thermal degradation due to scattering effects IR-loss at line defects. The approach presented here for defect density reduction will benefit these commercial optoelectronics. This proposal addresses the specification stated in solicitation topic O1.07 for "Epitaxial GaN films with threading dislocations less than 106 per cm2 for use in space qualified wide band-gap semiconductor devices at X- and Ka-band." The goal of The IIIAN Company is to provide these low defect density GaN films on 6" diameter substrates as starting templates for subsequent growth of GaN/AlGaN HEMT structures. With the common epitaxial growth techniques for group III-nitrides, Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD), line defects follow through from those in the initial buffer layer. By utilizing LPE to produce low defect density GaN films on 6" substrates, IIIAN will enable compound semiconductor manufacturers (i.e. RFMD, TriQuint, Anadigics) to better utilize the group III-nitride material system for the high frequency, high power SSPAs requested in this topic for future NASA missions to the moon and the planets.