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SBIR/STTR

Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C, Phase I

Completed Technology Project

Project Introduction

Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C, Phase I
Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500oC capable motor control power modules for direct integration with the exploration rovers required to operate in Venus-like environments. The Phase I of this proposed work will focus on the integrated MIDSJT device development and high-temperature packaging. Phase II will focus on the integration of the MIDSJT devices to construct full 3-Phase Inverter Motor Control Modules. Although SiC is the semiconductor material of choice for fabricating high-temperature (> 150 o C) power electronics, existing SiC MOSFET and JFET based transistor device technologies perform poorly at temperatures exceeding 200 o C. The proposed gate oxide-free Integrated MIDSJT device technology will overcome several problems associated with existing SiC device technologies by: (A) exhibiting desirable normally-OFF operation yet best-in-class on-state characteristics at temperatures as high as 500 o C, (B) eliminating parasitic inductances/capacitances associated with interconnecting discrete devices, and (C) eliminating high-temperature gate oxide reliability issues. Special device designs and fabrication processes will be investigated in this work for reliable device operation at 500 o C. Novel power device packaging techniques in the areas of power substrate, die-attach, chip metallization and wire bonds will be explored to demonstrate reliable module operation at 500 o C after several thermal cycles. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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