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SBIR/STTR

GaN-based, low-voltage avalanche photodiodes for robust and compact UV imagers, Phase I

Completed Technology Project

Project Introduction

GaN-based, low-voltage avalanche photodiodes for robust and compact UV imagers, Phase I
This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on low-cost substrates. The high-gain, high-speed and low-noise operation of the proposed device allow the replacement of bulkier and more fragile photomultiplier tubes (PMTs) for many UV photon-counting and imaging applications. In particular, reduction in size and weight in addition to improvements in reliability and ruggedness compared to PMTs, make this technology very suitable for some of the NASA's planned space missions as well as other civilian and defense applications that require high-sensitivity, solar-blind UV detection. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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