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SBIR/STTR

InGaN High Temperature Photovoltaic Cells, Phase I

Completed Technology Project

Project Introduction

InGaN High Temperature Photovoltaic Cells, Phase I
The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ºC to 250ºC. At the end of the Phase I, the technology will be at TRL 3. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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