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Small Business Innovation Research/Small Business Tech Transfer

SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics, Phase II

Completed Technology Project

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SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics, Phase II

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Primary U.S. Work Locations and Key Partners

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Organizations Performing Work	Role	Type	Location
Glenn Research Center (GRC)	Lead Organization	NASA Center	Cleveland, Ohio
GPD Optoelectronics Corporation	Supporting Organization	Industry	Salem, New Hampshire

Primary U.S. Work Locations

New Hampshire
Ohio

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

SiGe Semiconductor Devices for High-Performance Cryogenic Power Electronics, Phase II

Project Description

Primary U.S. Work Locations and Key Partners

Primary U.S. Work Locations

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