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Integrated L-Band T/R Module, Phase II

Completed Technology Project

Project Introduction

Integrated L-Band T/R Module, Phase II
The goal of this Phase II project is to deliver an integrated L-band transmit/receive (T/R) module which will be fabricated from a GaAs-based combined HBT/PHEMT epistructure. The T/R module will consist of a power amplifier, a low noise amplifier, and two switches. The performance goal for the low noise amplifier is 30 dB gain with a less than 1.0 dB noise figure. The performance goal for the power amplifier is 30 dB gain, 34 dBm (2.5 W) output power, and efficiency greater than 60%. The performance goal for the switches is that they not materially affect the operation of the amplifiers. All components will be fully integrated on a single substrate. Post Phase II work includes the integration of a phase shifter, amplitude modulator, and control and interface circuitry on the same chip. We estimate the technology readiness level at the end of the Phase II program to be 6 or 7. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.