The goal of this Phase II project is to deliver an integrated L-band transmit/receive (T/R) module which will be fabricated from a GaAs-based combined HBT/PHEMT epistructure. The T/R module will consist of a power amplifier, a low noise amplifier, and two switches. The performance goal for the low noise amplifier is 30 dB gain with a less than 1.0 dB noise figure. The performance goal for the power amplifier is 30 dB gain, 34 dBm (2.5 W) output power, and efficiency greater than 60%. The performance goal for the switches is that they not materially affect the operation of the amplifiers. All components will be fully integrated on a single substrate. Post Phase II work includes the integration of a phase shifter, amplitude modulator, and control and interface circuitry on the same chip. We estimate the technology readiness level at the end of the Phase II program to be 6 or 7.