Wide-bandgap SiC semiconductors have been recently investigated for use in power devices, because of their potential capabilities of operating at high power densities, high temperatures and at high frequencies and thus offering advantages such as high efficiency, small size and light weight. Currently a few power devices based on SiC technology have been demonstrated and commercialized. Therefore, an opportunity exists to develop and demonstrate a SiC power inverter, showing the system-level impacts of using commercially available SiC power devices compared with an Si-based inverter, and addressing the related technical issues/risks of implementing SiC technology. Following a successful demonstration of the concept feasibility in Phase I, Phase II research will fully develop, demonstrate, model, and characterize a three-phase all SiC inverter. The inverter will be constructed through the integration of several supporting technologies including circuit design and device paralleling, high temperature packaging and thermal management, high temperature gate based on SOI technology, and other passive components. In the Phase II, the underlying technical issues that govern the fabrication and performance of this SiC inverter will be addressed, and its technical/economical benefits will be analyzed. By implementing technology developed, a high-efficiency, compact SiC inverter technology can be anticipated for potential NASA and other applications.