Skip Navigation
SBIR/STTR

Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD, Phase I

Completed Technology Project

Project Introduction

Ultra-low Noise, High Bandwidth, 1550nm HgCdTe APD, Phase I
Voxtel Inc. proposes to optimize the design of a large area, 1.55?m sensitive HgCdTe avalanche photodiode (APD) that achieves high gain with nearly no excess noise. By optimizing the APD device structure and by exploiting the most recent insight into the material?s ionization characteristics, we have engineered the vertical HgCdTe APD for nearly noiseless gain (ultra low k) with high bandwidth and with low dark current. As large area photodetectors necessarily have high dark current and increased capacitance, we will tradeoff the performance of a large area detector design with that of a pixilated design. A pixilated detector can reduce the amplifier noise and dark current in the local of the amplified events to sufficiently low levels for photon counting. Through the use of our low noise, high unit cell density, amplifier integrated circuits, we will demonstrate nearly ideal receiver performance for space optical communications applications. More »

Primary U.S. Work Locations and Key Partners

Project Library

Share this Project

Organizational Responsibility

Project Management

Project Duration

This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

^