Wide bandgap SiC power devices have the potential for reliable operations at higher junction temperatures, higher voltages, higher frequencies and thus higher power densities than what can be achieved with Si devices. These advantages enable the SiC technology-based power conversion systems (PCM) to be made smaller, lightweight, more efficient and robust. Recent studies predicted that the volume of a power converter system could be reduced five times through the utilization of SiC power devices. Despite this potential promise and encouraging results, more studies are needed to address the design and fabrication of SiC-based PCMs before their full potential can be realized. This project will develop an ultrahigh-efficiency, light and compact power converter system based on emerging SiC semiconductor technologies, quantifying the system benefits and addressing the related technical issues. The Phase I work include: (1) Circuit design of an SiC-based converter and modeling to evaluate the converter performance (power loss, efficiency, temperature rise, and weight/size heatsink etc.), and (2) High temperature packaging and high power density thermal management to support the SiC converter.