Skip Navigation

A Non-Volatile SRAM For Spaceborne Applications Using a Novel Ferroelectric Non-Linear Dielectric, Phase I

Completed Technology Project

Project Introduction

A Non-Volatile SRAM For Spaceborne Applications Using a Novel Ferroelectric Non-Linear Dielectric, Phase I
A ferroelectric non-linear dielectric was recently discovered that, in their film form, possess a number of properties that make it an excellent choice for radiation-hardened electronics, particularly a radiation hardened (total dose hardened and SEE immune) non-volatile (NV) static random access memory (SRAM). Electrical measurements of these films demonstrated a relatively low dielectric constant (~20), an inherent ability to form a native buffer layer when deposited directly on silicon, and a strong polarization hysteresis effect. These results indicate that this film may be used to replace the two n-channel and two p-channel transistors in a traditional 4-T SRAM latch cell with two n-channel and two p-channel non-linear dielectric field effect transistors (NLDFETs). The threshold voltage hysteresis effect of the NLDFET should achieve full SEU immunity to at least 80MeV-cm2/mg of ionizing radiation, when used in a standard 6-transistor SRAM cell structure, thus have ultra-fast access times (like commercial SRAMs) while offering full non-volatility. In Phase I we will provide the device proof of concept, then in Phase II build a prototype memory. Phase III will see commercialization by licensing and sales. The resulting NV-SRAM products have the potential to be orders of magnitude faster than any existing EEPROM or FLASH devices because the nonlinear dielectric film forms a native dielectric with silicon giving the structure resistance to "wear-out" or "data-retention" problems. Finally, the SMI material is fully compatible with CMOS processing and has been accepted into major commercial silicon fabrication lines as a high-k dielectric for linear applications. More »

Primary U.S. Work Locations and Key Partners

Project Library

Share this Project

Organizational Responsibility

Project Management

Project Duration

Technology Areas

Light bulb

Suggest an Edit

Recommend changes and additions to this project record.

This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.