Skip Navigation
Small Business Innovation Research/Small Business Tech Transfer

Radiation Hard, High Efficiency, Quadruple Junction Solar Cells Based on InGaAsN

Completed Technology Project

Project Description

Radiation hard, high efficiency, quadruple junction solar cells based on InGaAsN, Phase I
The proposed innovation is the development of a technology that will enable the manufacture of high-efficiency (>40%), quadruple(4) junction solar cells on lightweight Ge substrates. We plan to achieve this objective by developing a new semiconductor alloy, InGaAsN, which will be employed as the 1.18 eV bottom cell in quadruple-junction [InGaP (1.8 eV) / GaInAs P(1.5 eV) / InGaAsN (1.18 eV) / Ge (0.67eV)] solar cells. The InGaAsN alloy material will be lattice matched to Ge, which is a clear improvement over existing inverted metamorphic (IMM) technology, specifically, the existing lattice-mismatched InGaAs 1.0 eV bottom cell is replaced with a lattice-matched InGaAsN 1.18 eV bottom cell. This eliminates the need to grow a thick graded buffer layer. Another advantage of this system is higher efficiency and higher reliability solar cells which can effectively be a drop in replacement to the existing Ge based space cells. At the end of this project, we expect to have developed and integrated InGaAsN - 1.18 eV material, which can be used in Ge-based multi-junction cells that have the potential to achieve efficiencies in excess of 40% at AM0, one sun illumination. More »

Anticipated Benefits

Project Library

Primary U.S. Work Locations and Key Partners

Technology Transitions

Light bulb

Suggest an Edit

Recommend changes and additions to this project record.