This Phase I SBIR proposes to develop high performance (low dark current, high quantum efficiency, and low NEdT) infrared epitaxy materials based on Type II Strained Layer Superlattice (SLS) for large format space-based sensor applications. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI-IR. The initial goal includes achieving QE of at least 30% with LWIR spectral wavelength band near 12 μm. The SLS detector design will be done in collaboration with Dr. Sarath Gunapla's infrared device group at JPL to ensure that the effort addresses NASA needs. Successful device architecture shorter wavlengths will be evolved to longer wave large-format application. If successful, a Focal Plane Array may be fabricated during Phase II.