This STTR Phase I proposal addresses a NASA need for improved near-to-mid IR detectors for imaging and spectroscopy. High performance IR detectors with cutoff wavelengths in the range of 2.5 5.0 microns will be developed using InGaAs / AlAsSb semiconductor materials. The proposal uses a two-pronged approach to address the problem of detector performance degradation by materials' defects, both "grown in" defects and defects caused by radiation damage. The project will apply an advanced device architecture, the nBn detector, which has been shown to be extremely successful in other IR detectors for suppression of defect-related dark current and noise. Additionally, the project will apply our proprietary defect mitigation technology, which passivates defects via UV hydrogenation treatments. The result of this program will be near-to-mid IR detectors with higher performance, reduced cooling requirements, and improved radiation hardness. These detectors are compatible with integration into mega-pixel IR imaging arrays for imaging 2.5 5.0 micron wavelengths with improved performance and reduced cost, which will be produced in Phase II. Amethyst has teamed with the University of Oklahoma and FLIR Systems to ensure that this technology can be readily transitioned to meet NASA mission requirements.