Small Business Innovation Research/Small Business Tech Transfer
300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems, Phase II
Project Introduction
Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor propose a SBIR program focused on the development of 15 kW/300C-rated power converters using AlGaN/GaN-Si MOS-HFETs and Schottky rectifiers. The proposed AlGaN/GaN-Si power converters to be developed in this program will usher in a new generation of high-efficiency, low-cost, and radiation-hard power conversion units on-board future NASA spacecraft. Phase I of this proposed work focussed on the optimization of the design and fabrication of the AlGaN/GaN-Si MOS-HFET and NSJ SBR devices. Phase II will be focused on the design and integration of Si/GaN gate-drive circuitry with the power SBRs and transistors to create high-power integrated circuits. Another major objective during Phase II will be the construction of Rad-Hard packaging for the power ICs. At the end of Phase II of this program, a fully-functional 15 kW/300C rated power converter IC equipped with AlGaN/GaN-on-Si MOS-HFETs, Natural SuperJunction (NSJ) SBRs as free-wheeling diodes and on-chip SiC or III-Nitride gate drive circuitry will be demonstrated at a switching frequency of ≥ 1 MHz and at a temperature of ≥ 300C. As compared to the existing state-of-the-art power electronics technology, the proposed AlGaN/GaN-on-Si power converters will offer (A) Lower on-state losses, 300C operation and 1 MHz switching capability (B) A Lateral device architecture, which is highly desirable for construction for monolithic power integrated circuits (C) Possibility of hybrid interconnection of III-Nitride Power Devices with on-chip Rad-Hard AlGaN/GaN Gate Drive Circuitry (D) Desirable Normally-OFF Power Switches
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Anticipated Benefits
The technology developed here is fundamental to a wide range of NASA PMAD and motor control applications. Drive and control electronics for motors in the next generation robotic systems such as rovers have to be directly placed on the motor housing. Integration of 300C capable power electronics with the motor enables creation of distributed actuator systems with significantly reduced interconnects and wiring. The motor sensing electronics consists of a position sensor, digitizer, digital controller and digital to analog converter. For DC-DC converters, power ICs developed in this program connects power sources in a wide variety of NASA mission systems with power sources as Solar arrays, Brayton rotating unit, stirling radioscopes, and fuel cells with various loads like electric propulsion, communications systems, instruments and actuators. A power IC is also the building block for the interface between energy storage devices like batteries and flywheels with the energy sources and loads. Switchmode power supplies improved by high frequency, high temperature power switch is critical for NASA synthetic aperture RADAR's (SAR) antenna array T/R modules. T/R modules typically operate in a pulsed mode, drawing current pulses from a power supply on a periodic basis determined by the operation of the overall RADAR system. The ripple in the output voltage of the T/R module power supply impacts the performance of the RADAR system. The specifications of the power switch to be developed in this program are ideally suited for most Air Force PMAD applications. This includes propulsion system externals like actuators, pumps, and starters, weapons ejection, fuel transfer, lighting, avionics, RADAR, landing gears & breaks, steering, powered doors and ramps, gun drives, anti-icing, environmental control and auxiliary emergency power systems. The realization of a high power density switchmode power supplies and DC-DC conversion circuits will benefit Army's Future Combat System (FCS) by offering it an important part of the subsystem. An electric and hybrid vehicle technology directly affects the M113 APC, Bradley infantry fighting vehicle, HMMWV, 5-ton M939A1 truck, AAAV, 50-ft personnel boat and a more electric aircraft by making them highly deployable, sustainable, survivable, lethal and affordable. An integrated electric power system made using GaN high power devices will increase component placement flexibility within vehicles, double fuel economy by continuously operating smaller engines under optimum conditions, and reduce armor protected volume. Commercial switchmode power supplies will also benefit from the development of such components. Such power supplies are used in computer power supplies, cellular phone base station power supplies, consumer electronics, lighting applications, and robotic and motor control applications.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
| GeneSiC Semiconductor Inc. | Lead Organization |
Industry
Minority-Owned Business,
Small Disadvantaged Business (SDB)
|
Dulles, Virginia |
Glenn Research Center
(GRC)
|
Supporting Organization | NASA Center | Cleveland, Ohio |
Primary U.S. Work Locations
-
Ohio
-
Virginia
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Organization:
- GeneSiC Semiconductor Inc.
Responsible Program:
- Small Business Innovation Research/Small Business Tech Transfer
Project Management
Program Director:
Program Manager:
Principal Investigator:
- Siddarth Sundaresan
Project Duration
Start: Apr 2014
End: Jul 2016
Technology Maturity (TRL)
| Start: | 4 |
| Current: | 6 |
| Estimated End: | 6 |
Applied Research
Development
Demo & Test
Technology Areas
Primary:
- TX01 Propulsion Systems
- TX01.2 Electric Space Propulsion
- TX01.2.2 Electrostatic
Target Destination
Others Inside the Solar System
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