An improved efficiency amplifier for high power pulse applications at P-Band will be investigated that will support space based RADAR systems. Current P-Band pulsed amplifier technologies use Silicon Bi-polar and LDMOS device technologies that have increased internal device parasitic characteristics that lead to lower gain and more difficult power matching over GaN technologies. Integra Technologies has experience with all three device technologies. Integra also has the design and manufacturing processes in place to optimize transistor design and amplifier design for P-Band pulsed applications. The phase I effort resulted in successful demonstration of an Integra GaN device at P-Band frequencies using Class AB bias and Switch Mode matching techniques to achieve greater than 80% efficiency at 160W. The phase II device investigation will include geometry modifications to optimize the operating voltage, chip size, and cell dimensions for the P-Band RADAR application. Ultimately, the optimized GaN device will be scaled into a 1kWatt output stage with an appropriate driver device to enable a greater than 40dB gain amplifier. The amplifier will include material selections and layout techniques for reliability under high RF energy signal levels and low pressure environments.