Skip Navigation
SBIR/STTR

F-band, High-Efficiency GaN Power Amplifier for the Scanning Microwave Limb Sounder and SOFIA, Phase II

Completed Technology Project

Project Introduction

QuinStar Technology proposes to develop a high-efficiency, 4-W SSPA operating at F-band frequencies (106-114 GHz). This will be achieved by employing two major innovations. Firstly, we are employing state-of-the-art wide bandgap GaN (Gallium Nitride) devices. At millimeter-wave frequencies, these GaN devices have demonstrated power densities of 5 to 8 times higher than GaAs or InP devices. Further, we are proposing to operate these devices in a quasi-switching mode, which has demonstrated, in Phase I simulations, drain efficiencies approaching 70%. The resulting MMIC, operating over the 106 to 114 GHz band, will produce an output power of one watt and an efficiency of greater than 33%. Secondly, we are proposing to utilize a new low loss, H-tee combining approach to combine 4 of these high-efficiency chips to achieve 4 watts. The net result is a unique combination of high performance devices and innovative power combining. We anticipate that this work will result in an order of magnitude increase in the state-of-the-art of SSPA output power and efficiency at F-band. We anticipate that this work will be very important for NASA's Earth Science missions and for DoD W-band radar and communications applications. More »

Anticipated Benefits

Primary U.S. Work Locations and Key Partners

Share this Project

Organizational Responsibility

Project Management

Project Duration

Technology Maturity (TRL)

Technology Areas

Light bulb

Suggest an Edit

Recommend changes and additions to this project record.
^