Compact power management and conditioning systems are of great interest in aerospace applications, where the allowed on-board space and the weight for the power conversion units are very limited. Proposed power module will be a plug-in replacement for conventional IGBT modules, offering substantially smaller physical module size and higher power density, lower conduction and switching losses, higher operating temperature with minimum cooling requirements. Power device modules capable of operating at higher junction temperatures with reduced conduction and switching losses can help to eliminate the active cooling, or at least reduce the size and weight of the required heat-sinks. Higher switching frequency of silicon carbide device modules will lead to significant reduction in size and weight of passive power converter's components, such as capacitors, filters, inductors.
Funding this proposal will lead to the development and commercialization of a unique compact, efficient and reliable power SiC JFET power module technology for a wide range of civilian, aerospace and military applications, where compact power converters are needed with minimum cooling requirements. The USCi proposed solution targets the principle ease of use issue and in so effectively becomes an enhanced drop in replacement to existing Si based switches and modules. The application of present state-of-the-art Si MOSFETs, IGBTs and state of the art commercial SiC MOSFETs is limited to junction temperatures of about 150 C. The USCi proposed cascode configuration will raise the steady-state operating junction temperature to over 175 C rating. Proposed cascode power module will enable circuit designers to provide significantly smaller, more reliable, more efficient and lower cost solutions for applications such as power factor correction circuits, photovoltaic micro-inverters, power supplies, motors & pump drives, industrial power converters, and consumer appliances. Today there is estimated to be a $15B TAM for Si power discrete devices & Si power modules, however high performance, cost effective and easy to use SiC transistor alternatives will quickly migrate into this space.