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Center Independent Research & Development: JPL IRAD

Analog and Power Microelectronics to Higher Radiation Levels and Lower Temperatures

Completed Technology Project

Project Introduction

Analog and Power Microelectronics to Higher Radiation Levels and Lower Temperatures

A study was done to examine low-temperature effects and radiation damage properties of bipolar integrated circuits.   Anticipated benefits:  useful in missions with electronics that operate at low temperature. This task developed analytical methods for low temperature performance.   Bandgap narrowing was shown to be the underlying reason for the large decrease in npn transistor gain at low temperature. Furthermore, we have developed analytical methods for radiation damage in combination with low temperature.  This model reproduces our experimental results of temperature dependent radiation damage yields. This work has shown that operating bipolar circuits at reduced temperature can improve radiation tolerance.  

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