Graphene Field Effect Transistors for Radiation Detection
Project Introduction
This is propose to develop Graphene Field Effect Transistor based Radiation Sensors (GFET-RS) for NASA Manned Spaceflight Missions anticipated in next several decades.
The device consists of a graphene piece deposited on a Si substrate with certain thickness of insulation layer. In our initial experiment, constant radiation was applied above the GFET and device conductance was measured before and after the radiation. We observed an increase of the device mobility (transconductance) after the radiation. This demonstration showed that graphene is radiation hard and its conductance changes with radiation. With the IRAD fund, we will continue exploring sensing mechanisms in GFETs and identify optimal absorber substrates and device geometries to improve radiation detection speed, sensitivity, and energy resolution of our GFET-RS devices.
More »Anticipated Benefits
The ultimate goal is to develop a new class of portable, high-sensitivity radiation sensors that can be carried by crew members in future manned flight missions.
More »Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
Goddard Space Flight Center
(GSFC)
|
Lead Organization | NASA Center | Greenbelt, MD |
Primary U.S. Work Locations
-
Maryland
Project Library
Share this Project
Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Center / Facility:
- Goddard Space Flight Center (GSFC)
Responsible Program:
- Center Innovation Fund: GSFC CIF
Project Management
Project Duration
Technology Maturity (TRL)
| Start: | 1 |
| Current: | 2 |
| Estimated End: | 2 |
Technology Areas
Primary:
Other / Cross-cutting:
