SBIR/STTR
Monolithically integrated AlN/GaN electronics for harsh environments, Phase I
Project Introduction
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures.
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Anticipated Benefits
Development of monolithically-integrated RTD/HEMT devices in radiation-hard III-nitride materials is anticipated to yield unprecedented operational performance in digital and alanolg integrated circuits necessary for NASA's long duration missions such as the Europa Jupiter System Mission (EJSM) where high radiation levels and extreme temperatures are expected. The proposed improvements in the operation of GaN-based integrated circuits will provides the key enabling technology for production of practical eelctronics for application in harsh environments. These devices are sought for a number of military and civilian applications, including nuclear power, oil, gas and geothermal drilling, automotive and aerospace industries.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
Jet Propulsion Laboratory
(JPL)
|
Lead Organization | NASA Center | Pasadena, California |
| SVT Associates | Supporting Organization | Industry | Eden Prairie, Minnesota |
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Center / Facility:
- Jet Propulsion Laboratory (JPL)
Responsible Program:
- SBIR/STTR
Project Management
Program Director:
Program Manager:
Project Manager:
Principal Investigators:
- David Deen
- Amir Dabiran
Project Duration
Start: Feb 2012
End: Aug 2012
Technology Maturity (TRL)
| Start: | 3 |
| Current: | 3 |
| Estimated End: | 4 |
Applied Research
Development
Demo & Test
Technology Areas
Primary:
- TX02 Flight Computing and Avionics
- TX02.1 Avionics Component Technologies
- TX02.1.6 Radiation Hardened ASIC Technologies
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