SBIR/STTR
Monolithically integrated AlN/GaN electronics for harsh environments, Phase I
Project Introduction
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures. In the Phase I program, we propose to develop same-wafer discrete devices (capacitors, HEMTs, and RTDs) by employing a novel multi-layer AlN/GaN heterostructure design, and to demonstrate the radiation hardness of these devices
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
| SVT Associates | Lead Organization | Industry | Eden Prairie, Minnesota |
Jet Propulsion Laboratory
(JPL)
|
Supporting Organization | NASA Center | Pasadena, California |
Primary U.S. Work Locations
-
California
-
Minnesota
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Organization:
- SVT Associates
Responsible Program:
- SBIR/STTR
Project Management
Project Duration
Start: Feb 2012
End: Aug 2012
Technology Maturity (TRL)
| Start: | 3 |
| Current: | 3 |
| Estimated End: | 4 |
Applied Research
Development
Demo & Test
Technology Areas
Primary:
- TX02 Flight Computing and Avionics
- TX02.3 Avionics Tools, Models, and Analysis
- TX02.3.2 Space Radiation Analysis and Modeling
Target Destinations
The Sun, Earth, The Moon, Others Inside the Solar System, Outside the Solar System, Mars
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