The high power Schottky diode developed in this SBIR Phase I/Phase II program program will support many future electronics that will be used in NASA missions to the Moon, Mars and beyond. The Schottky diodes are one of the key elements of NASA's Power Management and Distribution (PMAD) systems. Operating at higher voltages than the conventional Schottky diodes, the Ga2O3-based Schottky diode will improve the performance of the PMADs. The proposed Schottky diode will operate at high-power and high-voltage, which will also be tolerant to heavy ion radiation to be suitable for variety of NASA applications.
In addition to NASA mission needs, the SBIR team anticipates a variety of commercial applications for the high-power high-voltage Ga2O3-based Schottky diode. The unique properties of the Schottky diodes enable them to be used in many different types of circuit making applications where other diodes would not be able to provide the same level of performance. Some of the unique applications of the Schottky diodes are power rectification, RF mixing, detector diode, and clamp diode. They are also used in photovoltaic systems.