To address this technology need, it is proposed to develop an enhanced thermoelectric material with advantages that include ease of manufacture, low cost, low toxicity, higher temperature capability (up to 1500C) and much higher ZT figure of merit (>0.5). Specifically, this research will entail coating nano-sized BaTiO3 particles with appropriate coatings to produce n-doped and p-doped semiconductors. The samples will be prepared using a Direct Current Sintering (DCS) furnace which will allow production of thermoelectric materials which have nano-sized grains. The goal is to increase the ZT value above 0.5 in this study. To decrease thermal conductivity, nano-sized powders will be micro-milled to approximately 30 nm before coating with 5-10 nm layer. Sintering in the DCS furnace will be done to ensure that grain growth does not occur.