Currently have a working breadboarded prototype using SiC transistors which were initially intended for high power and high temperature applications. Sensitivity is only on the uT/Hz-1/2 scale but can theoretically be pushed well below the nT/Hz-1/2 limit making them competitive with fluxgates and optically pumped atomic gas. Leverage the silicon carbide processing facilities at NASA Glenn (and Monolith Semiconductor) to evaluate performance of various, already fabricated, SiC sensors. Utilize knowledge gained from research in conjunction with defect engineering to enhance performance of future SiC sensors.
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