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SBIR/STTR

Space Qualified, Radiation Hardened, Dense Monolithic Flash Memory, Phase II

Completed Technology Project

Project Introduction

Space Qualified, Radiation Hardened, Dense Monolithic Flash Memory, Phase II
Space Micro proposes to build a radiation hardened by design (RHBD) flash memory, using a modified version of our RH-eDRAM Memory Controller to solve all the single event effects issues (SEU, SEFI and multiple bit errors) using either a RHBD process with NAND Flash cells. The RH-eFlash will be manufactured on known radiation characterized ASIC processes: examples being 130 nm or 65 nm TSMC or other US foundry equivalents. Using the TSMC example, the resulting RH-eFlash, fabricated on a 65 nm process, provides 512 Mbit to 1 Gbit of radiation hardened (SEU, SEFI, SEL and TID) NAND Flash memory. Operating temperature and packaging reliability is addressed through a thorough memory integrated circuit design (temperature) and post IC high-reliability package selections (i.e. ceramic packages). Note that this technology is portable to future available and radiation tested ASIC processes with even finer geometries and high density. More »

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