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SBIR/STTR

Stackable Radiation Hardened FRAM, Phase I

Completed Technology Project

Project Introduction

Stackable Radiation Hardened FRAM, Phase I
Satellite and space systems designers of long duration lunar and planetary missions continue to find it difficult to provide the ever increasing amount of memory considering the impact on platform size and weight. Under SBIR contract NNG04CA25C NxGen Electronics Inc has developed a radiation hardened Ferro Electric Random Access (FRAM) memory which will have 2Mb density and radiation characteristics useful for many satellite and space applications. The design and building of prototype chips is being completed under this contract. However, funding was insufficient for full radiation characterization. In addition, feedback from potential customers, including JPL and other prime contractors, indicates that even more density would be useful in the same footprint. NxGen has been developing rugged, high reliability, light weight 3D memory stacking technology which would improve the density over a monolithic package by a factor of 8. Although other technologies, such as MRAM, are being developed with the promise of high density, our understanding is that NASA/JPL would find the FRAM technology superior from a number of perspectives including density, performance and cost. Under sub-topic O1.05, Reconfigurable & Reprogrammable Communications Systems, sub-sub-topic, "Component Technology", we believe this proposal qualifies as novel advancement in memory density. More »

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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