Small Business Innovation Research/Small Business Tech Transfer
InP/GaAsSb HBT MMIC for W-Band, Phase I
Project Introduction
High-speed devices using InP play a critical role in the realization of power amplifiers for wireless and optical communication systems. Current gain cut-off frequencies in excess of 200 GHz have been demonstrated for InP HBTs, indicating the potential of these devices for use in high bandwidth communication systems and high-speed direct digital synthesizers. To achieve a higher output power and higher efficiency, InP HBT based on GaAsSb base layer is proposed in this research effort. This novel material technology offers the highest potential to achieve the highest output power and efficiency at W-band. We would like to achieve at least 1W of output power at W-band with at least an efficiency of 40%.
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Primary U.S. Work Locations and Key Partners
| Organizations Performing Work | Role | Type | Location |
|---|---|---|---|
Jet Propulsion Laboratory
(JPL)
|
Lead Organization | NASA Center | Pasadena, California |
| MicroLink Devices, Inc. | Supporting Organization |
Industry
Minority-Owned Business
|
Niles, Illinois |
Primary U.S. Work Locations
-
California
-
Illinois
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Organizational Responsibility
Responsible Mission Directorate:
- Space Technology Mission Directorate (STMD)
Lead Center / Facility:
- Jet Propulsion Laboratory (JPL)
Responsible Program:
- Small Business Innovation Research/Small Business Tech Transfer
Project Management
Project Duration
Start: Jan 2005
End: Jul 2005
Technology Areas
Primary:
- TX05 Communications, Navigation, and Orbital Debris Tracking and Characterization Systems
- TX05.2 Radio Frequency
- TX05.2.2 Power-Efficiency
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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.