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Center Independent Research & Development: GSFC IRAD

A novel material for next generation MEMS and Sensor Devices

Completed Technology Project
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Project Description

Project Image  A novel material for next generation MEMS and Sensor Devices

Our goal is to build a PS etching cell and determine how different fabrication parameters affect its thermal properties. We aim to demonstrate a very low thermal conductivity, capable for use in bolometers. Build an in-house capability to fabricate porous silicon on the detector development lab Study methods for selective etching of porous silicon (ion implantation) to enable structures for MEMS devices and detectors. Test the thermal conductivity of porous silicon

We will work with the University of Maryland to design a single tank etching cell Etch porous silicon under different conditions and develop a method to characterize physical properties. Create fabrication processes that involve ion implantation and silicon-on-insulator wafers. Study the thermal conductivity

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This is a historic project that was completed before the creation of TechPort on October 1, 2012. Available data has been included. This record may contain less data than currently active projects.

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