{"project":{"acronym":"","projectId":93756,"title":"Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature","primaryTaxonomyNodes":[{"taxonomyNodeId":10742,"taxonomyRootId":8816,"parentNodeId":10740,"level":3,"code":"TX08.1.2","title":"Electronics","definition":"Electronics includes analog and mixed signal instrument electronics and the associated packaging technology, designed for reuse and/or extensibility, with reduced volume, mass, and power that can operate over a wide temperature range and other extreme environments such as high radiation. This includes detector support electronics such as digital back ends, high-voltage power supplies, wireless networking techniques, and integrated electronic, photonic, and sensor readouts that enable significant signal processing and data compression.","exampleTechnologies":"Analog and mixed-signal instrument front end electronics application-specific integrated circuits (ASICs), Field Programmable Gate Arrays (FPGAs) and discrete components (e.g., radio frequency (RF) System on Chip, Multi-Channel Digitizer (MCD); control and bias voltage electronics; low noise amplifiers; multi-channel A/D and D/A Converters; trans-impedance amplifiers and bias generators), space cube, onboard Synthetic Aperture Radar (SAR) processor, Modular Unified Space Technology Avionics for Next Generation missions (MUSTANG), nanoelectronics","hasChildren":false,"hasInteriorContent":true}],"startTrl":4,"currentTrl":6,"endTrl":6,"benefits":"Of particular importance is to meet the capability performance goals in the NASA technology roadmaps. The proposed technology helps with achieving these goals in radiation-rich as well as high temperature harsh conditions. Specifically, the proposed technology would help the development of technologies for the robotic exploration of high-temperature environments, such as the Venus surface, Mercury, or the deep atmosphere of Gas Giants. For example the planned Venus lander mission might greatly benefit from the proposed technology. The proposed silicon carbide integrated circuit technologies have the potential to significantly enhance, or reduce technical risk for in situ missions to high-temperature environments with temperatures approaching 500C or higher. In addition to helping missions to high temperature harsh environments, the proposed high temperature electronics would play a significant role in improving the state of intelligent propulsion systems as well as more electric and distributed aircraft and shuttle control electronics.
The benefits of the availability of high temperature silicon carbide electronics go beyond the use of these electronics in Venus, Mercury and Gas Giant probes and vessels. Such a technology would enable new sensor and electronics systems in geothermal, drilling and gas exploration applications, resulting in higher efficiency and environment friendliness. Also, this new technology would help enhance sensing and control applications in automobiles, airplanes and shuttles, by enabling use of circuits near engines and heat generating subsystems. Additionally, the high temperature electronics would prove to be useful in defense systems operating in extreme harsh environments either by enabling use of sensors in engines and rockets, or by relieving the cooling needs of electronics used for these sensors and electronics.","description":"To extend the survivability of high temperature extreme environment missions, we propose to design, fabricate and test silicon carbide integrated circuits that are radiation tolerant and high temperature operation capable. Bulk silicon electronics mostly cease to operate properly at temperatures above the 150C to 200C range due to high off-state leakage. The Silicon-On-Insulator version pushes this limit further to 300C; however, the Venus surface exploration systems and gas giant probes require electronics that can operate above this temperature. A solution for high temperature electronics is the use of devices fabricated using wide bandgap semiconductors. Silicon carbide as being the most mature wide bandgap technology and shown to operate at temperature as high as 500-600C offers alternative device and circuit solutions for high temperature electronics. To this end, CoolCAD has the expertise to design, layout and fabricate silicon carbide integrated circuits to address this need, and extend the useful lifetime of vessels and probes in extreme environments.","startYear":2017,"startMonth":6,"endYear":2017,"endMonth":12,"statusDescription":"Completed","principalInvestigators":[{"contactId":5661,"canUserEdit":false,"firstName":"Akin","lastName":"Akturk","fullName":"Akin Akturk","fullNameInverted":"Akturk, Akin","primaryEmail":"akin.akturk@coolcadelectronics.com","publicEmail":true,"nacontact":false}],"programDirectors":[{"contactId":206378,"canUserEdit":false,"firstName":"Jason","lastName":"Kessler","fullName":"Jason L Kessler","fullNameInverted":"Kessler, Jason L","middleInitial":"L","primaryEmail":"jason.l.kessler@nasa.gov","publicEmail":true,"nacontact":false}],"programExecutives":[{"contactId":215154,"canUserEdit":false,"firstName":"Jennifer","lastName":"Gustetic","fullName":"Jennifer L Gustetic","fullNameInverted":"Gustetic, Jennifer L","middleInitial":"L","primaryEmail":"jennifer.l.gustetic@nasa.gov","publicEmail":true,"nacontact":false}],"programManagers":[{"contactId":62051,"canUserEdit":false,"firstName":"Carlos","lastName":"Torrez","fullName":"Carlos Torrez","fullNameInverted":"Torrez, Carlos","primaryEmail":"carlos.torrez@nasa.gov","publicEmail":true,"nacontact":false}],"projectManagers":[{"contactId":3250981,"canUserEdit":false,"firstName":"Umesh","lastName":"Patel","fullName":"Umesh Patel","fullNameInverted":"Patel, Umesh","primaryEmail":"Umeshkumar.D.Patel@nasa.gov","publicEmail":true,"nacontact":false},{"contactId":461333,"canUserEdit":false,"firstName":"Theresa","lastName":"Stanley","fullName":"Theresa M Stanley","fullNameInverted":"Stanley, Theresa M","middleInitial":"M","primaryEmail":"theresa.m.stanley@nasa.gov","publicEmail":true,"nacontact":false}],"website":"","libraryItems":[{"file":{"fileExtension":"pdf","fileId":296745,"fileName":"SBIR_2017_1_BC_S4.04-8775","fileSize":267122,"objectId":293276,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"260.9 KB"},"files":[{"fileExtension":"pdf","fileId":296745,"fileName":"SBIR_2017_1_BC_S4.04-8775","fileSize":267122,"objectId":293276,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"260.9 KB"}],"id":293276,"title":"Briefing Chart","description":"Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature, Phase I Briefing Chart","libraryItemTypeId":1222,"projectId":93756,"primary":false,"publishedDateString":"","contentType":{"lkuCodeId":1222,"code":"DOCUMENT","description":"Document","lkuCodeTypeId":341,"lkuCodeType":{"codeType":"LIBRARY_ITEM_TYPE","description":"Library Item Type"}}},{"caption":"Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature, Phase I Briefing Chart Image","file":{"fileExtension":"png","fileId":304036,"fileName":"SBIR_2017_1_BC_S4.04-8775","fileSize":285508,"objectId":300586,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"278.8 KB"},"files":[{"fileExtension":"png","fileId":304036,"fileName":"SBIR_2017_1_BC_S4.04-8775","fileSize":285508,"objectId":300586,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"278.8 KB"}],"id":300586,"title":"Briefing Chart Image","description":"Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature, Phase I Briefing Chart Image","libraryItemTypeId":1095,"projectId":93756,"primary":true,"publishedDateString":"","contentType":{"lkuCodeId":1095,"code":"IMAGE","description":"Image","lkuCodeTypeId":341,"lkuCodeType":{"codeType":"LIBRARY_ITEM_TYPE","description":"Library Item Type"}}}],"transitions":[],"primaryImage":{"file":{"fileExtension":"png","fileId":304036,"fileSizeString":"0 Byte"},"id":300586,"description":"Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature, Phase I Briefing Chart Image","projectId":93756,"publishedDateString":""},"responsibleMd":{"acronym":"STMD","canUserEdit":false,"city":"","external":false,"linkCount":0,"organizationId":4875,"organizationName":"Space Technology Mission Directorate","organizationType":"NASA_Mission_Directorate","naorganization":false,"organizationTypePretty":"NASA Mission Directorate"},"program":{"acronym":"SBIR/STTR","active":true,"description":"
The NASA SBIR and STTR programs fund the research, development, and demonstration of innovative technologies that fulfill NASA needs as described in the annual Solicitations and have significant potential for successful commercialization. If you are a small business concern (SBC) with 500 or fewer employees or a non-profit RI such as a university or a research laboratory with ties to an SBC, then NASA encourages you to learn more about the SBIR and STTR programs as a potential source of seed funding for the development of your innovations.
The SBIR and STTR programs have 3 phases:
The SBIR and STTR Phase I contracts last for 6 months with a maximum funding of $125,000, and Phase II contracts last for 24 months with a maximum funding of $750,000 - $1.5 million.
Opportunity for Continued Technology Development Post-Phase II:
The NASA SBIR/STTR Program currently has in place two initiatives for supporting its small business partners past the basic Phase I and Phase II elements of the program that emphasize opportunities for commercialization. Specifically, the NASA SBIR/STTR Program has the Phase II Enhancement (Phase II-E) and Phase II eXpanded (Phase II-X) contract options.
Please review the links below to obtain more information on the SBIR/STTR programs.
Provides an overview of the SBIR and STTR programs as implemented by NASA
Provides access to the annual SBIR/STTR Solicitations containing detailed information on the program eligibility requirements, proposal instructions and research topics and subtopics
Schedule and links for the SBIR/STTR solicitations and selection announcements
Federal and non-Federal sources of assistance for small business
Search our complete archive of awarded project abstracts to learn about what NASA has funded
Still have questions? Visit the program FAQs
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