{"project":{"acronym":"","projectId":9342,"title":"Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping","primaryTaxonomyNodes":[{"taxonomyNodeId":10741,"taxonomyRootId":8816,"parentNodeId":10740,"level":3,"code":"TX08.1.1","title":"Detectors and Focal Planes","definition":"Detectors, focal planes and readout integrated circuits provide large-format array technologies that require high quantum efficiency (QE); low noise, high resolution, uniform, and stable response; low power and cost; and high reliability. These technologies include low-noise, high-speed, low-power and radiation hardened readout integrated circuit (ROIC) electronics; superconducting sensors; spectral detectors; polarization-sensitive detectors; radiation-hardened detectors; and micro-Kelvin and sub-Kelvin high sensitivity detectors that cover the spectrum from submillimeter wave (Far-IR) to X-ray.","exampleTechnologies":"Backshort Undergrid bolometer arrays, Mercury Cadmium Telluride and Strained Superlattice Arrays, charge coupled devices, sidecar readout integrated circuits, radiometric calibration and abnormality correction algorithms (e.g. non-uniformity)","hasChildren":false,"hasInteriorContent":true}],"startTrl":3,"currentTrl":5,"endTrl":5,"benefits":"Characteristics such as visible-blind operation and potentially 1E15 factor lower dark current than Silicon make SiC based detectors especially attractive for the many UV and EUV needs expressed in NASA's future missions. These programs include the Global Atmospheric Composition Mission (GACM) for monitoring atmospheric ozone and related gasses as well as the Geostationary Coastal and Air Pollution Events (GEO-CAPE) mission for monitoring aerosols, ozone, air pollution and coastal ecosystems. In addition, the Geostationary Operational Environmental Satellite (GOES-S) will require instruments to monitor UV from solar flares and the Sun's atmosphere, as well as the Sun's extreme UV radiation. According to the Heliophysics Roadmap of 2009, EUV Avalanche Photo detectors will be necessary for imaging very low intensity UV radiation in order to amplify extremely low photon flux UV signals. The low dark current of wide band-gap SiC APDs will help to realize low flux UV detectors, where detecting flux rates as low as six photons per second are being sought. SiC APD's will operate at relatively low voltages compared to PMTs. By utilizing solid state technology, wide bandgap based UV spectrometers will offer a lightweight and small volume instrument option for use in space vehicles. In summary, SiC APDs will provide benefits to NASA for many years by expanding its imaging capabilities into the EUV regime with higher resolutions and enhanced signal-to-noise ratios.
Non-NASA commercial applications include UV spectrometry for the military, the semiconductor industry, as well as the food processing and healthcare industries where bacterial sterilization, identification, and classification, are important. A particular unique application that can take further advantage of the wide bandgap of SiC detectors, in addition to solar-blindness and low noise qualities, is their applicability to high temperature operation. High temperature applications can include monitoring of UV in rocket plumes and jet engines. Fires in jet engines are of safety concern to the U.S. Air Force and commercial airplane manufacturers. We plan to develop relationships with firms that develop and market sensors, such as Integrated Micro Sensors of Houston, Texas, in an effort to partner with them to license or market high temperature UV sensors that are a unique outcome of this R&D effort. Deep UV detectors are also one of the enabling technologies for UV Non-Line-of-Sight (NLoS) communication networks that have the added benefit of data security.","description":"Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. SiC UV APDs implementation is challenging due to some material defects, relatively not-well modeled device operation, and very high absorption coefficients near 200nm wavelengths. The objective of this proposed work is to extend the state-of-the-art in UV sensors by: a) developing SiC deep UV detectors, and b) improving their responsivity down to near 200nm wavelengths. We plan to accomplish this goal by using the SiC UV APD design simulator developed in Phase I, and making further improvements as we introduce new design concepts to improve the responsivity utilizing novel design and fabrication techniques tof the critical n+ top contact layer on the APD to reduce charge recombination in the UV absorption layer. We will develop unique fabrication techniques to improve surface quality of the SiC APD structure. This effort will be led by Auburn University, which has developed state-of-the-art fabrication methodologies and capabilities for SiC MOSFETs, in collaboration with CoolCAD who will design the devices and the implantation process. Our main effort will focus on generating a built-in surface field by creating a steep doping profile right at the surface. Since steep dopant gradients necessary to create a field within 40nm of the surface are not feasible using epitaxial growth techniques for SiC, we will develop implantation and dopant activation sequences, and backend processing techniques to achieve this goal. By creating a field in the deep UV absorption layer (~40nm), we will reduce the initial recombination of electron-hole pairs created by the UV photons and increase current reaching the multiplication region of the APD.","startYear":2012,"startMonth":4,"endYear":2014,"endMonth":9,"statusDescription":"Completed","principalInvestigators":[{"contactId":5661,"canUserEdit":false,"firstName":"Akin","lastName":"Akturk","fullName":"Akin Akturk","fullNameInverted":"Akturk, Akin","primaryEmail":"akin.akturk@coolcadelectronics.com","publicEmail":true,"nacontact":false}],"programDirectors":[{"contactId":206378,"canUserEdit":false,"firstName":"Jason","lastName":"Kessler","fullName":"Jason L Kessler","fullNameInverted":"Kessler, Jason L","middleInitial":"L","primaryEmail":"jason.l.kessler@nasa.gov","publicEmail":true,"nacontact":false}],"programExecutives":[{"contactId":215154,"canUserEdit":false,"firstName":"Jennifer","lastName":"Gustetic","fullName":"Jennifer L Gustetic","fullNameInverted":"Gustetic, Jennifer L","middleInitial":"L","primaryEmail":"jennifer.l.gustetic@nasa.gov","publicEmail":true,"nacontact":false}],"programManagers":[{"contactId":62051,"canUserEdit":false,"firstName":"Carlos","lastName":"Torrez","fullName":"Carlos Torrez","fullNameInverted":"Torrez, Carlos","primaryEmail":"carlos.torrez@nasa.gov","publicEmail":true,"nacontact":false}],"projectManagers":[{"contactId":60394,"canUserEdit":false,"firstName":"Carl","lastName":"Kotecki","fullName":"Carl Kotecki","fullNameInverted":"Kotecki, Carl","primaryEmail":"carl.a.kotecki@nasa.gov","publicEmail":true,"nacontact":false},{"contactId":461333,"canUserEdit":false,"firstName":"Theresa","lastName":"Stanley","fullName":"Theresa M Stanley","fullNameInverted":"Stanley, Theresa M","middleInitial":"M","primaryEmail":"theresa.m.stanley@nasa.gov","publicEmail":true,"nacontact":false}],"website":"","libraryItems":[{"caption":"Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping ","file":{"fileExtension":"png","fileId":291727,"fileName":"SBIR_2010_2_BC_S1.05-8465","fileSize":340128,"objectId":288241,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"332.2 KB"},"files":[{"fileExtension":"png","fileId":291727,"fileName":"SBIR_2010_2_BC_S1.05-8465","fileSize":340128,"objectId":288241,"objectType":{"lkuCodeId":889,"code":"LIBRARY_ITEMS","description":"Library Items","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"objectTypeId":889,"fileSizeString":"332.2 KB"}],"id":288241,"title":"Project Image","description":"Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping ","libraryItemTypeId":1095,"projectId":9342,"primary":true,"publishedDateString":"","contentType":{"lkuCodeId":1095,"code":"IMAGE","description":"Image","lkuCodeTypeId":341,"lkuCodeType":{"codeType":"LIBRARY_ITEM_TYPE","description":"Library Item Type"}}}],"transitions":[{"transitionId":65499,"projectId":9342,"partner":"Other","transitionDate":"2012-04-01","path":"Advanced From","relatedProjectId":9194,"relatedProject":{"acronym":"","projectId":9194,"title":"Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping","startTrl":2,"currentTrl":3,"endTrl":3,"benefits":"Deep UV detectors as well as sources are important for the semiconductor industry for lithography applications. For next generation deep submicron devices, deep UV detectors and instruments are necessary to achieve feature sizes that are comparable or less than the photon wavelength. Deep UV detectors are also one of the enabling technologies for UV Non-Line-of-Sight (NLoS) communication networks that have the added benefit of data security. Additionally, these SiC APDs can be used for flare detection in oil-wells and jet engines, and in the fields of bio-detection and radiation detection.
NASA has several applications for deep ultraviolet detectors. These range from long-range mission applications such as those for the Europa-Jupiter-Saturn Mission (EJSM) to earth-orbit missions. EJSM Applications: Radiation hardened deep UV detectors are ideal for the UV Spectrometer (UVS) scheduled to be included in the payload for the Jupiter-Europa-Orbiter (JEO) that is part of the EJSM. This project can partially satisfy the requirement of EUV+FUV (70-200nm) scan range for the JEO and the FUV+MUV (110-330nm) range for the Jupiter-Ganymede-Orbiter (JGO) Since radiation levels in the MRad range are estimated for the EJSM, the Phase II effort of this program on developing rad-hard readout electronics based on the current CoolCAD-NASA program experience with cryogenic and radiation testing of bulk and SOS devices for NASA, can prove to be very valuable. Earth Orbit Mission Applications: Deep UV detectors and associated readout electronics that is designed to be radiation hard and visible and solar blind, can be used extensively for next generation hyperspectral Earth remote sensing experiments. Deep UV detectors can be used as EUV photon counters for detecting ozone in the earth's atmosphere, and for detecting hydrogen by measuring the Lyman-alpha radiation.","description":"Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower operating voltages, radiation hardness, ruggedness and scalability. The design, fabrication and optimization of SiC UV APDs is challenging due to some material defects, relatively not-well modeled device operation, and very high absorption coefficients near 100nm wavelengths. These challenges can be overcome with detailed co-modeling, characterization, design and fabrication. Successfully operating SiC UV detectors are of utmost importance for astronomy, space exploration, upper atmosphere monitoring, and systems such as Non-Line-of-Sight (NLoS) communication. Through Phase I and Phase II, we propose to develop Silicon Carbide (SiC) based UV detectors for space applications. The initial target is the 100nm to 300nm wavelength range, with the peak responsivity expected to be within the 200nm-300nm interval. For the 100nm-200nm wavelength range, we will experiment with the use of an AlGaN cap-layer as the absorber and SiC as the multiplier. Phase I effort will focus on the design and detailed physics based simulation of these SiC APD structures. We will use SiC UV detectors fabricated by the GE Global Research Center and AlGaN APDs from University of Maryland for measurements and calibration.","startYear":2011,"startMonth":2,"endYear":2011,"endMonth":9,"statusDescription":"Completed","website":"","program":{"acronym":"SBIR/STTR","active":true,"description":"
The NASA SBIR and STTR programs fund the research, development, and demonstration of innovative technologies that fulfill NASA needs as described in the annual Solicitations and have significant potential for successful commercialization. If you are a small business concern (SBC) with 500 or fewer employees or a non-profit RI such as a university or a research laboratory with ties to an SBC, then NASA encourages you to learn more about the SBIR and STTR programs as a potential source of seed funding for the development of your innovations.
The SBIR and STTR programs have 3 phases:
The SBIR and STTR Phase I contracts last for 6 months with a maximum funding of $125,000, and Phase II contracts last for 24 months with a maximum funding of $750,000 - $1.5 million.
Opportunity for Continued Technology Development Post-Phase II:
The NASA SBIR/STTR Program currently has in place two initiatives for supporting its small business partners past the basic Phase I and Phase II elements of the program that emphasize opportunities for commercialization. Specifically, the NASA SBIR/STTR Program has the Phase II Enhancement (Phase II-E) and Phase II eXpanded (Phase II-X) contract options.
Please review the links below to obtain more information on the SBIR/STTR programs.
Provides an overview of the SBIR and STTR programs as implemented by NASA
Provides access to the annual SBIR/STTR Solicitations containing detailed information on the program eligibility requirements, proposal instructions and research topics and subtopics
Schedule and links for the SBIR/STTR solicitations and selection announcements
Federal and non-Federal sources of assistance for small business
Search our complete archive of awarded project abstracts to learn about what NASA has funded
Still have questions? Visit the program FAQs
","programId":73,"responsibleMd":{"acronym":"STMD","canUserEdit":false,"city":"","external":false,"linkCount":0,"organizationId":4875,"organizationName":"Space Technology Mission Directorate","organizationType":"NASA_Mission_Directorate","naorganization":false,"organizationTypePretty":"NASA Mission Directorate"},"responsibleMdId":4875,"stockImageFileId":36648,"title":"Small Business Innovation Research/Small Business Tech Transfer"},"lastUpdated":"2024-1-10","releaseStatusString":"Released","viewCount":449,"endDateString":"Sep 2011","startDateString":"Feb 2011"},"infoText":"Advanced from another project within the program","infoTextExtra":"Another project within the program (Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping)","dateText":"April 2012"},{"transitionId":65500,"projectId":9342,"transitionDate":"2014-09-01","path":"Closed Out","closeoutDocuments":[{"title":"Final Summary Chart","file":{"fileExtension":"pdf","fileId":305705,"fileName":"SBIR_2010_2_FSC_S1.05-8465","fileSize":179296,"objectId":65500,"objectType":{"lkuCodeId":1841,"code":"TRANSITION_FILES","description":"Transition Files","lkuCodeTypeId":182,"lkuCodeType":{"codeType":"OBJECT_TYPE","description":"Object Type"}},"fileSizeString":"175.1 KB"},"transitionId":65500,"fileId":305705}],"infoText":"Closed out","infoTextExtra":"","dateText":"September 2014"}],"primaryImage":{"file":{"fileExtension":"png","fileId":291727,"fileSizeString":"0 Byte"},"id":288241,"description":"Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping ","projectId":9342,"publishedDateString":""},"responsibleMd":{"acronym":"STMD","canUserEdit":false,"city":"","external":false,"linkCount":0,"organizationId":4875,"organizationName":"Space Technology Mission Directorate","organizationType":"NASA_Mission_Directorate","naorganization":false,"organizationTypePretty":"NASA Mission Directorate"},"program":{"acronym":"SBIR/STTR","active":true,"description":"The NASA SBIR and STTR programs fund the research, development, and demonstration of innovative technologies that fulfill NASA needs as described in the annual Solicitations and have significant potential for successful commercialization. If you are a small business concern (SBC) with 500 or fewer employees or a non-profit RI such as a university or a research laboratory with ties to an SBC, then NASA encourages you to learn more about the SBIR and STTR programs as a potential source of seed funding for the development of your innovations.
The SBIR and STTR programs have 3 phases:
The SBIR and STTR Phase I contracts last for 6 months with a maximum funding of $125,000, and Phase II contracts last for 24 months with a maximum funding of $750,000 - $1.5 million.
Opportunity for Continued Technology Development Post-Phase II:
The NASA SBIR/STTR Program currently has in place two initiatives for supporting its small business partners past the basic Phase I and Phase II elements of the program that emphasize opportunities for commercialization. Specifically, the NASA SBIR/STTR Program has the Phase II Enhancement (Phase II-E) and Phase II eXpanded (Phase II-X) contract options.
Please review the links below to obtain more information on the SBIR/STTR programs.
Provides an overview of the SBIR and STTR programs as implemented by NASA
Provides access to the annual SBIR/STTR Solicitations containing detailed information on the program eligibility requirements, proposal instructions and research topics and subtopics
Schedule and links for the SBIR/STTR solicitations and selection announcements
Federal and non-Federal sources of assistance for small business
Search our complete archive of awarded project abstracts to learn about what NASA has funded
Still have questions? Visit the program FAQs
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