{"projectId":6766,"project":{"projectId":6766,"title":"Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers, Phase I","startDate":"2008-01-18","startYear":2008,"startMonth":1,"endDate":"2008-07-21","endYear":2008,"endMonth":7,"programId":73,"program":{"ableToSelect":false,"acronym":"SBIR/STTR","isActive":true,"description":"<p>The NASA SBIR and STTR programs fund the research, development, and demonstration of innovative technologies that fulfill NASA needs as described in the annual Solicitations and have significant potential for successful commercialization. If you are a small business concern (SBC) with 500 or fewer employees or a non-profit RI such as a university or a research laboratory with ties to an SBC, then NASA encourages you to learn more about the SBIR and STTR programs as a potential source of seed funding for the development of your innovations.</p><p><strong>The SBIR and STTR programs have 3 phases</strong>:</p><ul><li><strong>Phase I</strong> is the opportunity to establish the scientific, technical, and commercial feasibility of the proposed innovation in fulfillment of NASA needs.</li><li><strong>Phase II</strong> is focused on the development, demonstration and delivery of the proposed innovation.</li></ul><p>The SBIR and STTR Phase I contracts last for 6 months with a maximum funding of $125,000, and Phase II contracts last for 24 months with a maximum funding of $750,000 - $1.5 million.</p><ul><li><strong>Phase III</strong> is the commercialization of innovative technologies, products, and services resulting from either a Phase I or Phase II contract. Phase III contracts are funded from sources other than the SBIR and STTR programs and may be awarded without further competition.</li></ul><p><strong>Opportunity for Continued Technology Development Post-Phase II</strong>:</p><p>The NASA SBIR/STTR Program currently has in place two initiatives for supporting its small business partners past the basic Phase I and Phase II elements of the program that emphasize opportunities for commercialization. Specifically, the NASA SBIR/STTR Program has the Phase II Enhancement (Phase II-E) and Phase II eXpanded (Phase II-X) contract options.&nbsp;</p><p><strong>Please review the links below to obtain more information on the SBIR/STTR programs.</strong></p><ul><li><strong><a target=\"_blank\" href=\"http://sbir.gsfc.nasa.gov/sites/default/files/ParticipationGuide.pdf\">Participation Guide</a></strong></li></ul><p>Provides an overview of the SBIR and STTR programs as implemented by NASA</p><ul><li><strong><a href=\"http://sbir.gsfc.nasa.gov/solicitations\">Program Solicitations</a></strong></li></ul><p>Provides access to the annual SBIR/STTR Solicitations containing detailed information on the program eligibility requirements, proposal instructions and research topics and subtopics</p><ul><li><strong><a href=\"http://sbir.gsfc.nasa.gov/prg_sched_anncmnt\">Schedule and Awards</a></strong></li></ul><p>Schedule and links for the SBIR/STTR solicitations and selection announcements</p><ul><li><strong><a href=\"http://sbir.gsfc.nasa.gov/content/additional-sources-assistance\">Sources of Assistance</a></strong></li></ul><p>Federal and non-Federal sources of assistance for small business</p><ul><li><strong><a href=\"http://sbir.gsfc.nasa.gov/abstract_archives\">Awarded Abstracts</a></strong></li></ul><p>Search our complete archive of awarded project abstracts to learn about what NASA has funded</p><ul><li><strong><a href=\"http://sbir.gsfc.nasa.gov/content/frequently-asked-questions\">Frequently Asked Questions</a></strong></li></ul><p>&nbsp;Still have questions? Visit the program FAQs</p>","parentProgram":{"ableToSelect":false,"isActive":true,"description":"Catalyst is a portfolio of early stage programs that specialize in different innovation constituencies and mechanisms to push the state of the art in aerospace technology development","programId":92327,"responsibleMd":{"canUserEdit":false,"locationEdit":false,"organizationRolePretty":"","organizationTypePretty":""},"title":"Catalyst","acronymOrTitle":"Catalyst"},"parentProgramId":92327,"programId":73,"responsibleMd":{"organizationId":4875,"organizationName":"Space Technology Mission Directorate","acronym":"STMD","organizationType":"NASA_Mission_Directorate","canUserEdit":false,"locationEdit":false,"organizationRolePretty":"","organizationTypePretty":"NASA Mission Directorate"},"responsibleMdOffice":4875,"stockImageFileId":36648,"title":"Small Business Innovation Research/Small Business Tech Transfer","acronymOrTitle":"SBIR/STTR"},"description":"High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices.   In fact, solid state lighting, high-temperature and high-power electronics, microelectronic and mechanical sensors, and high-efficiency solar cells are all poised at a new level of development. This enormous market is waiting for low-cost, high quality substrates to achieve performance and fabrication economies of scale.  This NASA SBIR phase I project addresses the development of a dislocation filter that can routinely prepare low-stress GaN thin films with threading dislocation densities below 1E7 cm-2. The method relies on using a low-angle ion beam to induce both nanofilter for defect reductions and to inhibit droplet formation at low growth temperatures. Dislocation densities have so far been determined by standard etch pit densities method.  The goal the project to optimize the defect nanofilter to reduce the TD to less than 1E6 cm-2.  To obtain a more practical evaluation of the effectiveness and commercial viability of the method, heterojunction field effect transistors with high electron mobility will be fabricated in these ultra-low defect density films. These high-quality material based high electron mobility transistors (HEMTs) will enable high linearity power amplifiers with excellent thermal stability and frequency response.  A plus would be if these were compatible with the mature silicon technology that is already in place. The new method to fabricate GaN-based high-performance devices on low defect substrates would be scalable to large area wafers, allowing the technology to be economical.  The proposed method to grow on low-stress, low-dislocation density films will lead to the production of electronic devices of unparalleled performance.","releaseStatus":"Released","status":"Completed","viewCount":698,"destinationType":[],"lastUpdated":"01/27/25","favorited":false,"detailedFunding":false,"projectContacts":[{"contactId":41782,"canUserEdit":false,"firstName":"Bentao","lastName":"Cui","fullName":"Bentao Cui","fullNameInverted":"Cui, Bentao","receiveEmail":"Subscribed_User","projectContactRole":"Principal_Investigator","projectContactId":21165,"projectId":6766,"programContactRolePretty":"","projectContactRolePretty":"Principal Investigator"}],"programContacts":[{"contactId":206378,"canUserEdit":false,"firstName":"Jason","lastName":"Kessler","fullName":"Jason L Kessler","fullNameInverted":"Kessler, Jason L","middleInitial":"L","email":"jason.l.kessler@nasa.gov","receiveEmail":"Subscribed_User","programContactRole":"Program_Director","programContactId":143,"programId":73,"programContactRolePretty":"Program Director","projectContactRolePretty":""},{"contactId":62051,"canUserEdit":false,"firstName":"Carlos","lastName":"Torrez","fullName":"Carlos Torrez","fullNameInverted":"Torrez, Carlos","email":"carlos.torrez@nasa.gov","receiveEmail":"Subscribed_User","programContactRole":"Program_Manager","programContactId":194,"programId":73,"programContactRolePretty":"Program Manager","projectContactRolePretty":""}],"leadOrganization":{"organizationId":4946,"organizationName":"Jet Propulsion Laboratory","acronym":"JPL","organizationType":"FFRDC_2fUARC","city":"Pasadena","stateTerritoryId":59,"stateTerritory":{"abbreviation":"CA","country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"name":"California","stateTerritoryId":59,"isTerritory":false},"country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"zipCode":"91109","projectId":6766,"projectOrganizationId":21980,"organizationRole":"Lead_Organization","canUserEdit":false,"locationEdit":false,"organizationRolePretty":"Lead Organization","organizationTypePretty":"FFRDC/UARC"},"otherOrganizations":[{"organizationId":4946,"organizationName":"Jet Propulsion Laboratory","acronym":"JPL","organizationType":"FFRDC_2fUARC","city":"Pasadena","stateTerritoryId":59,"stateTerritory":{"abbreviation":"CA","country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"name":"California","stateTerritoryId":59,"isTerritory":false},"country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"zipCode":"91109","projectId":6766,"projectOrganizationId":21980,"organizationRole":"Lead_Organization","canUserEdit":false,"locationEdit":false,"organizationRolePretty":"Lead Organization","organizationTypePretty":"FFRDC/UARC"},{"organizationId":3949,"organizationName":"SVT Associates","organizationType":"Industry","city":"Eden Prairie","stateTerritoryId":25,"stateTerritory":{"abbreviation":"MN","country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"name":"Minnesota","stateTerritoryId":25,"isTerritory":false},"country":{"abbreviation":"US","countryId":236,"name":"United States"},"countryId":236,"zipCode":"55344-3677","cageCode":"OZFB6","projectId":6766,"projectOrganizationId":32049,"organizationRole":"Supporting_Organization","canUserEdit":false,"locationEdit":false,"organizationRolePretty":"Supporting Organization","organizationTypePretty":"Industry"}],"primaryTx":{"taxonomyNodeId":11217,"taxonomyRootId":8817,"parentNodeId":11216,"code":"TX08.1.1","title":"Detectors and Focal Planes","description":"Detectors, focal planes, and readout integrated circuits (ROICs) provide large-format array technologies that require high quantum efficiency (QE); low noise, high resolution, uniform, and stable response; low power and cost; and high reliability. 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