Innovative projects are sought in the areas of basic research, fundamental research, applied research, development and systems and other concept formulation studies. Projects combining both science and technology are encouraged.
The JPL Director created the Research and Technology Development (R&TD) program for the purpose of enhancing JPL's ability to address future missions and objectives and to propel JPL into new research leadership roles. The program will support research in areas consistent with JPL's strategic direction and long-term vision.
","parentProgram":{"ableToSelect":false,"acronym":"IRAD","isActive":true,"programId":87,"responsibleMd":{"canUserEdit":false,"locationEdit":false,"organizationRolePretty":"","organizationTypePretty":""},"title":"Center Independent Research & Development","manageGaps":false,"acronymOrTitle":"IRAD"},"parentProgramId":87,"programId":154,"responsibleMd":{"organizationId":4910,"organizationName":"Mission Support Directorate","acronym":"MSD","organizationType":"NASA_Mission_Directorate","canUserEdit":false,"locationEdit":false,"organizationRolePretty":"","organizationTypePretty":"NASA Mission Directorate"},"responsibleMdOffice":4910,"title":"Center Independent Research & Development: JPL IRAD","manageGaps":false,"acronymOrTitle":"JPL IRAD"},"description":"The goals of the proposed work are to Investigate the film thickness (10–50 nm), substrate material (c-plane sapphire, MgO), and temperature (20-35 K) dependencies of the IF bandwidth in order to understand its upper limit; Investigate the operation of mixer devices of different lateral size (0.2-5 μm2) and establish the minimum size limit not leading to the degradation of the microdevice characteristics (TC, critical current, resistivity); Validate the THz operation of quasioptical MgB2 mixers through measurements of the noise temperature, IF bandwidth (ΔfIF), and required LO power at 0.6 THz, 1.5 THz, and 2.5 THz. The targets are: TM ≤ 1000K, PLO ≈10 μW, ΔfIF ≈ 20 GHz.
","benefits":"Projects will benefit from new materials.
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